L-81XXIR4X - 8.0mm Infrared Emitting Diode
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| • Absolute Maximum Rating : (Ta=25°C) • | ||||
|---|---|---|---|---|
| Part No. | PD(mw) | VR(V) | Topr | Tstg |
| L-81XXIR4X | 240 | 5 | -35°C to 85°C | -35°C to 85°C |
| PARAMETER | Power Dissipation | Reverse Voltage | Operating Temperature Range | Storage Temperature Range |
| Lead Soldering Temperature｛1.6mm(0.063 inch) From Body｝250°C ± 5°C for 3 Seconds | ||||
| • Electro-Optical Characteristics : (Ta=25°C) • | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| Test Condition | IF=20mA IF=100mA |
VR=5V | IF=20mA | IF=20mA | IF=20mA | Data Sheet | |||||
| Part No. | VF(V) | IR (µA ) | λp(nm) | 2θ 1/2 (dge) | le(mw/sr) | ||||||
| Typ. | Max. | Max. | Typ. | Typ. | Typ. | ||||||
| L-814EIR4C | 1.4 1.5 |
1.6 1.8 |
10 | 850 | 20 | 80 |  |
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| L-818EIR4C | 1.4 1.5 |
1.6 1.8 |
10 | 850 | 40 | 20 | |
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| • Electro-Optical Characteristics : (Ta=25°C) • | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| Test Condition | IF=50mA IF=100mA |
VR=5V | IF=50mA | IF=50mA | IF=50mA | Data Sheet | |||||
| Part No. | VF(V) | IR (µA ) | λp(nm) | 2θ 1/2 (dge) | le(mw/sr) | ||||||
| Typ. | Max. | Max. | Typ. | Typ. | Typ. | ||||||
| L-816EIR4C | 1.4 1.7 |
1.8 2.0 |
10 | 850 | 28 | 33 | |
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| L-81AEIR4C | 1.4 1.7 |
1.8 2.0 |
10 | 850 | 50 | 80 | |
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